A Novel De-Embedding Technique of Packaged GaN Transistors

Abstract: This paper presents a novel de-embedding technique of packaged high-power transistors. With the proposed technique, the packaged model of the power amplifier (PA) tube can be divided into the frequency independent de-embedded intrinsic device (DID) and the frequency dependent internal parasitic network (IPN), which is of great help in reducing the design complexity of a broadband PA. Different from the conventional technique of parasitic extraction, the proposed technique only requires external measurements. The frequency independent characteristic of DID is verified and the IPN is modeled and calibrated for a 50 W gallium-nitride (GaN) transistor. At last, a broadband Doherty PA is fabricated with the de-embedding technique. According to the measured results, the PA exhibits satisfactory power and efficiency performance.

Keywords: de-embedding; power amplifier; intrinsic device; parasitic network